SiC industry is stepping into 8 inch with 12 inch substrates making accelerated breakthroughs

Silicon carbide (SiC) substrates, with their advantages of wide bandgap, high thermal conductivity, and high breakdown field strength, are widely used in "new infrastructure" fields such as 5G base stations, ultra-high voltage power transmission, new energy vehicles, and big data centers. As the professional SiC Substrate Manufacturer, HMT can provide all dimensions SiC Wafer including 2 inch 4 inch 6 inch and 8 inch. Not only Substrate but also As-cut Wafers and SiC Boules. Welcome customers contact us for inquiry.we have always provided preferential quotations and high quality products.


For a long time, the size of SiC substrates remained at 6 inch. It wasn't until 2020 that 8 inch SiC substrates gradually became a market focus. The rapid development of new energy vehicles has been the primary driving force behind the accelerated advancement of 8 inch technology.

Faced with continuously expanding market demand, improving production efficiency and reducing costs have become critical. Larger-sized substrates can increase the number of chips produced per wafer (DPW), thereby lowering the production cost per chip. For example:

The number of chips produced from an 8-inch substrate is approximately 1.8 times that of a 6-inch wafer. Although processing costs may rise, the overall cost is lower. Increased thickness can reduce edge warping and improve yield, making 8-inch substrates an effective way to reduce the cost of SiC devices.

Currently, 6 inch silicon carbide (SiC) substrates remain the mainstream, but 8 inch SiC substrates are rapidly developing and gradually entering mass production.In the future, with the improvement of the industrial chain and technological advancements, large-size SiC substrates will continue to reduce production costs and enhance device performance, offering more competitive solutions for fields such as new energy vehicles, industrial power supplies, and 5G communications.