Best 4 Inch SiC Substrate (4H-N Type) Low-Resistivity SiC Wafer Supplier

HMT's 4'' Silicon Carbide (SiC) substrates are engineered to deliver exceptional performance in high-power, high-frequency, and high-temperature environments. Featuring a 4H polytype structure with N-type nitrogen doping, these substrates achieve ultra-low resistivity (0.015–0.028 Ω·cm) – making them ideal for next-generation power electronics, RF devices, and LED applications. We offer competitive pricing for semiconductor companies, research laboratories, and academic institutions seeking high-value SiC solutions.

HMT SiC Substrate Product Range
2inch 4 inch 6 inch 8 inch SiC Substrate Wafers

2inch 4 inch 6 inch 8 inch SiC As-cut Wafers

2inch 4 inch 6 inch 8 inch Single Crystal SiC Boules

4 inch 6 inch 8 inch SiC on SiC Epi Wafer

Key Specifications:

• Diameter: 100±0.25 mm | Thickness: 350μm±25μm

• Grade Options: D / R / P (Device, Research, Production)

• Orientation: 4.0° off-axis toward <1120>±0.5° 

• Surface Finish: Si-face Chemical Mechanical Polishing (CMP) for atomically smooth surfaces.

• Back Finish: C-face polished to enhance handling and integration.

• Primary Flat: (1-100)±5.0° orientation | Flat Length: 32.5 mm±2 mm
  
  

Applications:

• Power devices (MOSFETs, IGBTs)

• RF and microwave components

• High-brightness LEDs

• Automotive and aerospace semiconductors
  
  

Why Choose Our SiC Substrate?

• Consistent Quality: Tight tolerances on thickness, diameter, and orientation ensure reliable performance.

• Advanced Processing: CMP-polished surfaces minimize defects and optimize epitaxial layer deposition.

• Versatility: Suitable for R&D, prototyping, and mass production across industries.
  
  

Optimized for seamless integration into cutting-edge semiconductor workflows, our 4-inch SiC substrate sets the standard for durability, efficiency, and scalability. Contact us to customize specifications for your project needs.