Un-doped HPSI 6 inch SiC Wafer Suppliers

As a professional manufacturer of silicon carbide (SiC) wafers, HMT supplies high-quality 6'' (150mm) Un-doped High-Purity Semi-Insulating (HPSI) SiC wafers. Our HPSI substrates feature exceptionally high resistivity (>10^5 Ω·cm), meeting the demanding requirements of advanced RF applications.The 150mm (6-inch) size represents the current mainstream standard for SiC wafers. These wafers serve two primary market segments:

1. Conductive (N-type): Used for high-performance power devices like Schottky diodes, MOSFETs, and IGBTs. Key applications include electric vehicles (EVs), rail transportation, and high-power transmission systems.
   
   

2. Semi-Insulating (HPSI): The ideal substrate for GaN RF device manufacturing. By growing high-quality gallium nitride (GaN) epitaxial layers on HPSI SiC, HMT enables the production of GaN-on-SiC epi wafers. These are further processed into critical microwave/RF components such as HEMTs, essential for information & communication technologies and radar systems.

The third generation semiconductor industry chain including SiC includes substrate → epitaxy → design → manufacturing → packaging. Among them, the substrate is the underlying material of all semiconductor chips, which plays the role of physical support, heat conduction and electricity conduction. Epitaxy is the growth of new semiconductor crystal layers on the substrate material. These epitaxy layers are important raw materials for manufacturing semiconductor chips and affect the basic performance of the devices. The design includes device design and integrated circuit design. The device design includes the structure and material of semiconductor device, which is closely related to epitaxy. It is necessary to fabricate the designed device structure and circuit on the epitaxial sheet through the complex process of photolithography, film deposition, etching, etc. Packaging refers to cutting the manufactured wafer into a bare chip.

4H-N SiC Wafer & 4H-SI SiC Wafer