Un-doped HPSI 6 inch SiC Wafer Suppliers

As a professional manufacturer of SiC Wafers, HMT can supply Un-doped HPSI 6 inch SiC Wafers. HPSI SiC Substrate is high resistivity >1E5ohm.cm. At present, the mainstream size of the market is 150mm 6 inch SiC wafer, which can be divided into conductive N types for power devices, such as Schottky diodes, MOSFET, IGBT, etc., used in new energy vehicles, rail transit and high-power transmission and transformation fields; The semi-insulated type is used to manufacture gallium nitride RF devices. By growing GaN epitaxial layer on semi-insulated SiC substrate, GaN on SiC Epi Wafer can be further prepared into microwave RF devices such as HEMT, which can be used in information communication, radio detection and other fields.

The third generation semiconductor industry chain including SiC includes substrate → epitaxy → design → manufacturing → packaging. Among them, the substrate is the underlying material of all semiconductor chips, which plays the role of physical support, heat conduction and electricity conduction. Epitaxy is the growth of new semiconductor crystal layers on the substrate material. These epitaxy layers are important raw materials for manufacturing semiconductor chips and affect the basic performance of the devices. The design includes device design and integrated circuit design. The device design includes the structure and material of semiconductor device, which is closely related to epitaxy. It is necessary to fabricate the designed device structure and circuit on the epitaxial sheet through the complex process of photolithography, film deposition, etching, etc. Packaging refers to cutting the manufactured wafer into a bare chip.
4H-N SiC Wafer & 4H-SI SiC Wafer