4H-SiC Wafer manufacturers

As a leading SiC wafer manufacturer, HMT supplies 2inch~8inch substrates with 4H polytype in both on-axis and off-axis orientation. Our conductive N-type wafers feature off-axis orientation (4.0° towards <11-20> ±0.5°), while semi-insulating (SI) types maintain on-axis orientation (<0001> ±0.25°). All substrates are available in multiple grades tailored to specific requirements. We additionally provide:

• As-cut SiC wafers (all diameters including 2'' 4''/6''/8'') without lapping/polishing

• SiC boules for custom processing

SiC As-cut Wafers                                                    SiC Boules

The advantages of 4H-N SiC Wafers as below:

1. High-temperature performance: SiC has high thermal conductivity and can operate at high temperatures, making it suitable for high-power and high-frequency electronic applications.

2. High breakdown voltage: SiC materials have a high breakdown voltage, enabling them to withstand high electric fields without electrical breakdown.

3. Chemical and environmental resistance: SiC is chemically resistant and can withstand harsh environmental conditions, making it suitable for use in challenging applications.

4. Reduced power loss: Compared to traditional silicon-based materials, SiC substrates enable more efficient power conversion and reduce power loss in electronic devices.

5. Wide bandgap: SiC has a wide bandgap, allowing the development of electronic devices that can operate at higher temperatures and higher power densities.