As-Cut SiC Wafer

As a global manufacturer and supplier of As cut SiC Wafers, HMT specialized in providing D grade Conductive N type 4 inch to 8 inch SiC As cut wafers. These unpolished SiC wafers thickness approximately 400um to 600um, making them ideal for testing grinding wheel and lapping plate machines. Additionally, we consistently offer competitive prices for our SiC As cut wafers in the market.

6 inch SiC As Cut Wafer For Grinding Application

The grinding process is to remove the surface blade and surface damage layer caused by the cutting process of SiC wafer, and repair the deformation caused by cutting. Due to the high hardness of SiC, the crystal surface of the SiC slice must be ground with a high-hardness abrasive (such as boron carbide or diamond powder) during the grinding process.

 The grinding process is generally divided into coarse grinding and fine grinding.

a) Rough grinding: The cast iron disc + single crystal diamond grinding liquid two-sided grinding method

This process can effectively remove the damaged layer caused by line cutting, repair the surface shape, reduce TTV, Bow, Warp, and the removal rate is stable, generally reaching 0.8-1.2um/min removal rate. However, the surface of the wafer after processing by this process is matte, and the roughness is larger, generally about 50nm, and the removal requirements of the post-process are higher.

b) Fine grinding: polyurethane foam Pad+ polycrystalline diamond grinding liquid two-sided grinding method

The surface roughness of the wafer processed by this process is low and can reach Ra<3nm, which is more conducive to the polishing of the SiC substrate after the process.