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Unpolished SiC Wafer from HMT company grown by PVT method increases the pretreatment technology of the raw material, improves the pure line and densit...
Unpolished SiC Wafer from HMT company grown by PVT method increases the pretreatment technology of the raw material, improves the pure line and density of the raw material, and reduces the possible defects in the crystal. we supply different thickness of no lapping no polishing 2 inch SiC Wafers such as 400um 500um 600um 900um 1100um 1200um etc. Welcome to contact us and customized your unique thickness As cut SiC Wafers.
SiC Material Features:
SiC Wafer is an indispensable material to support the electronic power industry, with several times higher than traditional silicon band gap, drift speed, breakdown voltage, thermal conductivity, high temperature resistance and other excellent characteristics, in high temperature, high pressure, high frequency, high power, photoelectric, radiation resistance, microwave and other electronic applications and aerospace, military, nuclear energy and other extreme environment applications have irreplaceable advantages.
HMT Unpolished SiC Wafer Package
SiC Wafer Applications
Benefiting from the development of 5G communications, national defense, new energy vehicles and new energy photovoltaic, SiC demand is growing at a considerable rate.
4inch & 6 inch SiC Wafer Manufacturer-New Energy Vehicles Applications
Ultrafast Laser Vertical Modification Of SiC Single Crystal Materials
P-type SiC Wafer Manufacturer Low Resistance High Doping
Detailed Explanation SiC Wafer Processing Technology
Contact: Mr.Kimrui
Phone: 15366208370
Tel: 15366208370
Email: kim@homray-material.com
Add: LiSheng Industrial Building, 60SuLi Road, WuZhong District, JiangSu Province, P.R.China.