4H-N SiC As-Cut Wafers Manufacturer For SiC Finishing Components

HMT specializes in manufacturing 4H-N Conductive Type silicon carbide (SiC) as-cut wafers tailored for SiC Finishing Components / Processing Parts. We can supply all grades of Raw Cut SiC wafers. Our wafers are engineered to meet the stringent demands of advanced semiconductor packaging, power electronics, and high-temperature applications, ensuring superior performance, durability, and process efficiency.

Customizable Specifications

• Diameter: 50.8mm, 100mm, 150mm, 200mm.

• Thickness: Ranging from 350μm to 1600μm (±25μm tolerance).
  
  

• Why Partner With Us?

• Fast Lead Times: Prototype to bulk production in 4-5 weeks.

• Global Support: Dedicated engineering team for technical guidance.

• Cost-Effective Solutions: Competitive pricing without compromising quality.
  
  

Contact our team to discuss your 4H-N As-cut SiC Wafer Projects.