As-cut SiC Substrate Supplier for IC Bonding

As a leading SiC wafer supplier in China, we have  and non-standard 900um 1000um etc AS-cut SiC wafer for choice. we enable superior performance in IC and semiconductor chip bonding applications. Our factory specializes in high-purity Silicon Carbide (Sstandard 350um 500um thickness SiC substrateiC) substrates engineered for demanding bonding processes in power electronics, RF devices, and advanced sensors.

Key Offerings:
✅ Conductive N-Type 4H-SiC Wafers:
Available in 2-inch to 8-inch diameters, featuring the industry-preferred 4H polytype for optimal thermal conductivity, high breakdown voltage, and exceptional electron mobility. Ideal for high-power/high-frequency ICs.

✅ As-Cut SiC Wafers:
Supplied with controlled surface roughness for specialized bonding processes or further custom polishing/epitaxy. Support Customize Thickness Services.

Why Partner With Us?

• Reliable Supply Chain: Consistent quality from a trusted China-based manufacturer

• Application Expertise: Substrates optimized for die bonding, wire bonding & hybrid integration

• Full Diameter Range: Scalable solutions from R&D (2"-4") to volume production (6"-8")

• Technical Specifications: Precise orientation, resistivity, and TTV ,Warp control
  
  

Engineered for robustness in high-temperature and high-power environments, our SiC wafers form the critical foundation for durable, high-efficiency IC packaging and chip bonding. Request datasheets or volume pricing today.