P-type SiC Wafer Manufacturer Low Resistance High Doping

As you know, Most SiC Wafer on the market is N type and SI type, but we can provide P-type SiC Wafer Today! We provide 2 inch 4 inch and 6 inch SiC Wafer with Al doped P type. Using Liquid phase growth technology can effectively improve the quality of SiC crystal, reduce the defects and impurities in the crystal, so as to improve the performance and reliability of the device. At the same time, the technology can significantly reduce production costs, making SiC materials economically viable in a wider range of applications.

P-type doping is a major technical bottleneck in the production of SiC Wafer, and the crystal growth of P-type SiC crystals has been successfully achieved by liquid phase method, which is of great significance for promoting the industrialization of wide band gap semiconductor devices (such as MOSFET, IGBT, etc.).

P-type SiC Wafer Basic Sepc:

Polytype: 4H/6H
Diameter: 149.5-150mm
Thickness: 350±25um
Resistivity: 0.06~0.11ohm.cm
MPD: <0.1cm^-2