SiC Substrate Producer 4H 100mm Silicon Carbide Wafer 150dia

Homray Material Technology (HMT) supplies 4H-SiC substrates in three industry-standard diameters: 100mm, 150mm, and 200mm. Available in both conductive and semi-insulating types, these substrates offer flexible grading options (P-grade, R-grade, or D-grade) tailored to specific project requirements. 

When SiC is utilized as the substrate material, production costs are typically higher due to its superior material properties, positioning HMT's solutions as high-value components for advanced semiconductor applications.Silicon carbide (SiC) substrates form the critical foundation of semiconductor chips, analogous to a building's structural base.

Substrate materials have now evolved to the  third generation , but the relationship between generations is not one of replacement. Instead, each generation is applied in different fields due to their distinct properties.  

First-generation substrates are primarily silicon-based For example, CPUs and GPUs use silicon substrates, and currently, 90% of semiconductor substrates are made of silicon (used in large-scale integrated circuits ).  

Second-generation substrates are represented by indium phosphide (InP) and gallium arsenide (GaAs) . Due to their high-speed, high-frequency optoelectronic properties, they are mainly used in optical modules, LEDs, and optoelectronic devices  (e.g., **optical communication, optical display, and optical storage ).  

Third-generation substrates include silicon carbide (SiC) and  gallium nitride (GaN) . Thanks to their high-temperature and high-voltage resistance, they are primarily used in  new energy vehicles, photovoltaics, and other fields  (for  high-frequency, high-power electronic devices ).  

Coexistence and Synergy of the Three Generations of Semiconductors  

Complementarity, Not Replacement :  

 Silicon remains the absolute mainstream for  logic chips and consumer electronics (accounting for 95% of the global semiconductor market ). 

GaAs and InP dominate  high-frequency and optoelectronic niche markets . 

SiC/GaN play an irreplaceable role in new energy and industrial applications .  

Examples of Technological Integration :  

GaN-on-Si: Combining gallium nitride with low-cost silicon substrates for  fast charging and RF applications   

iC-IGBT hybrid modules : Integrating silicon carbide with IGBTs to improve power grid conversion efficiency .  

Future Trends:  

Heterogeneous integration: Combining different materials (e.g.,Si + GaN) on a single chip to balance performance and cost.  

Ultra-wide bandgap materials: Emerging materials like gallium oxide (Ga₂O₃) and diamond may unlock new applications in ultra-high voltage (beyond 20kV) and quantum computing.