8 inch Semi-insulated SiC Substrate High Resistivity

Are you looking for High Resistivity 8 inch SiC Wafer ? Come and know HMT 8 inch HPSI type SiC Substrate Wafer. We produces best quanlity of un-doped 500um thickness HPSI SiC Wafer with bottom price. Acually, 8 inch SiC Boule and Wafers are the most newest and biggest dimension on the market in the world. More and more customers plan to switching 6 inch to 8 inch, please contact us for detailed technical parameters and quotation now.

SiC material has a wide band gap, high breakdown electric field, high thermal conductivity, high electron mobility and radiation resistance characteristics, SiC based SBD and MOSFET is more suitable for high-frequency, high temperature, high pressure, high power and radiation resistance in the environment.  Under the condition of the same power level, the use of SiC devices can reduce the volume of electric drive, electronic control, etc., to meet the demand of higher power density, more compact design, but also can make the electric vehicle longer range.  On the one hand, SiC power components are gradually mature in terms of technology, on the other hand, the trend of intelligent and electrification continues to evolve, and the upgrade of downstream traditional vehicles brings huge demand for power semiconductor, so there is a wide space for replacing SiC power devices.