8 inch Conductive 4H-N type SiC Wafer Supplier

The size of the SiC Wafer (calculated by diameter) is mainly 2 inches (50mm), 4 inches (100mm), 6 inches (150mm), 8 inches (200mm). SiC Wafers are constantly developing in the direction of large sizes. HMT can supply all dimensions SIC Substrate Wafers with N-type and SI-type. Our 8 inch SIC Wafers have good parameters but bottom price. 

SiC substrates can be divided into semi-insulating and conductive types. The semi-insulated substrate mainly achieves the intrinsic high resistivity of the crystal by removing various impurities in the crystal (especially shallow level impurities), while the conductive substrate achieves the low crystal resistivity by introducing nitrogen in the crystal growth process.

Gallium nitride RF devices prepared with semi-insulated SiC substrate are mainly power amplifiers for communication base stations and radar applications. Gallium nitride RF devices are the most ideal microwave RF devices so far, so it has become the core microwave RF devices in 4G/5G mobile communication systems, a new generation of active phased array radar and other systems.

8 inch SiC Substrae wafer and 8 inch SiC Boule Pictures