Home >> Products >> SiC Substrate Wafer
Homray Material Technology provide advanced material 4 inch SiC Wafer for worldwide semiconductor companies and lab researching applications. The diam...
Homray Material Technology provide advanced material 4 inch SiC Wafer for worldwide semiconductor companies and lab researching applications. The diameter of 4 inch SiC Substrate is 100mm±0.25mm. HMT can supply both Standard and Customized 4H-N type Conductive 4 inch SiC Wafers,like standard 350um and nonstandard 500um etc. Our 4 inch SiC Wafers have good parameters, low MPD, low TTV BOW etc...We use safety cassette package 4 inch SiC Wafer and ship via Internation Express.
SiC Wafer Application
SiC wide energy Gap (Band Gap) than the existing Si (silicon) Gap width more than 3 times wider, can withstand more than 10 times the voltage, SiC low loss, high power characteristics suitable for high voltage and high current application field, including electric vehicles, electric vehicle charging infrastructure, solar energy and offshore wind power and other green power generation equipment.ompared with traditional Si, the third-generation semiconductor material SiC can reduce the power conversion loss by 50%, reduce the power conversion cost by 20%, and improve the endurance of electric vehicles by 4%.
4inch & 6 inch SiC Wafer Manufacturer-New Energy Vehicles Applications
Ultrafast Laser Vertical Modification Of SiC Single Crystal Materials
P-type SiC Wafer Manufacturer Low Resistance High Doping
Detailed Explanation SiC Wafer Processing Technology
Contact: Mr.Kimrui
Phone: 15366208370
Tel: 15366208370
Email: kim@homray-material.com
Add: LiSheng Industrial Building, 60SuLi Road, WuZhong District, JiangSu Province, P.R.China.