4 inch SiC Wafer manufacturers

Homray Material Technology (HMT) supplies advanced 4 inch SiC wafers to global semiconductor manufacturers and research laboratories. Our 4'' SiC substrates feature a diameter of 100mm ± 0.25mm and are available in both standard 350μm and customized specifications (e.g., 500μm thickness). Designed as 4H-N type conductive wafers, they deliver superior performance with low Micropipe Density (MPD), minimal Total Thickness Variation (TTV), and controlled Bow. All wafers are securely packaged in industry-standard cassettes and shipped globally via International Express.

Standard 4'' SiC Substrate Spec

SiC Wafer Application

SiC wide energy Gap (Band Gap) than the existing Si (silicon) Gap width more than 3 times wider, can withstand more than 10 times the voltage, SiC low loss, high power characteristics suitable for high voltage and high current application field, including electric vehicles, electric vehicle charging infrastructure, solar energy and offshore wind power and other green power generation equipment.ompared with traditional Si, the third-generation semiconductor material SiC can reduce the power conversion loss by 50%, reduce the power conversion cost by 20%, and improve the endurance of electric vehicles by 4%.