Advanced HMT SiC Wafer Substrates For Power Electronics

SiC wafer substrates redefine semiconductor excellence, offering unparalleled efficiency for high-power, high-frequency, and extreme-environment applications. As a superior SiC Wafer Manufacturer, SiC substrates deliver 3x higher thermal conductivity, 10x greater breakdown voltage, and 50% lower energy losses, enabling breakthroughs in electric vehicles (EVs), renewable energy systems, and ultra-fast 5G/6G infrastructure.

Technical Specifications

• Material: 4H-SiC,6H-SiC,3C-SiC

• Diameter: 50.8mm/100mm/150mm/200mm (2''4''6''8”) with custom thickness available

• Surface Roughness: <0.2 nm Ra (epi-ready)

• Resistivity: 0.015–0.025 Ω·cm (semi-insulating options available)

  
  

The substrate wafer plays a crucial role in the semiconductor manufacturing process. As the foundation of devices and circuits, the substrate wafer not only provides structural support for the entire device but also delivers essential electrical, thermal, and mechanical support.

Its primary functions include:  

Mechanical Support: Offers a stable structural base to facilitate subsequent manufacturing steps.  

Thermal Management:Assists in heat dissipation to prevent overheating, which could compromise device performance.  

Electrical Properties:Influences key electrical characteristics of the device, such as conductivity and carrier mobility.  

In terms of applications, substrate wafers are widely used in:  

Microelectronic Devices: Such as integrated circuits (ICs), microprocessors, etc.  

Optoelectronic Devices:Including LEDs, lasers, photodetectors, etc.  

High-Frequency Electronic Devices:Such as RF amplifiers, microwave devices, etc.  

Power Electronic Devices:Such as power converters, inverters, etc.