4-Inch SiC Substrates Manufacturer｜High-Yield, Cost-Efficient Solutions

Designed for high-performance semiconductor manufacturing, HMT's 4-inch SiC substrates deliver unmatched reliability and efficiency in demanding power electronics and radio frequency (RF) applications. Not only 4 inch SiC Substrate,we also provide 6 inch and 8 inch 4H-SiC Wafers. Engineered with ultra-low defect density (<0.5 cm⁻²) these substrates enable faster time-to-market for electric vehicles (EVs), industrial motor drives, and 5G/6G infrastructure.

Key Advantages of 4-Inch SiC Substrates

Cost-Effective Scalability

Ideal for mid-volume production and R&D, reducing upfront costs while maintaining compatibility with legacy 4 inch fabrication tools.

Ultra-Smooth Surface Quality

Surface roughness <0.2 nm Ra (epi-ready), ensuring flawless epitaxial growth for GaN-on-SiC Epitaxy wafers and SiC-on-SiC devices.



Broad Industry Compatibility

• Supports both 4H-SiC and 6H-SiC crystal structures, tailored for MOSFETs, Schottky diodes, and RF amplifiers.

Technical Specifications

• Diameter: 100mm (4 inches)

• Thickness: 350µm ±25µm (thickness customizable)

• Crystal Type: 4H-SiC  (semi-insulating or conductive)

• Resistivity: 0.015–0.025 ohm·cm/≥1E5ohm.cm (adjustable doping)

• 
  

Join industry pioneers leveraging our SiC substrates to slash energy losses by 50% and double power density in critical systems. Request a quotation or datasheet today to experience the precision of next-level SiC innovation!