Semi-insulating SiC Boule Supplier

We manufacture 6 inch SiC Boules with HPSI semi-insulating type. The orientation is On axis: <0001> ±0.2°. We provide both D grade for laser cutting (cold split, water laser slicing) and wire sawing machine's testing, as well as P grade for production. SiC is currently the most mature third-generation semiconductor material, which is used in many fields such as new energy vehicles, high-speed rail locomotives, aerospace and wireless communications, and can be described as "everything can be silicon carbide".Welcome customers contact us for SiC Boule quotation and spec.

From the point of view of the process flow, SiC is generally first made into a crystal boule, and then through slicing, grinding, polishing to obtain silicon carbide substrate; Epitaxial substrate is grown to obtain epitaxial sheet. The epitaxial sheet is made into a device through the steps of photolithography, etching, ion implantation, deposition, etc., and the device is assembled into a module in a special shell.

The key equipment for SiC Boue growth and processing includes:

SiC powder synthesis equipment, 

SiC single crystal growth furnace

Diamond multi-line cutting machine

SiC grinding machine

SiC polishing machine, etc.

SiC single crystal is extremely rare in nature, almost does not exist, can only rely on artificial synthesis. The preparation methods of silicon carbide ingot are divided into physical vapor transfer (PVT), chemical vapor deposition and liquid phase epitaxy.

At present, the most mature commercial method is the physical gas phase transmission method, which is also the method to achieve industrial large-scale production. This method needs to sublimate the powder under high temperature vacuum environment, and then through the control of temperature field, let the sublimed components grow on the surface of the seed crystal to obtain silicon carbide crystal.