Conductive N Type SiC Boule

HMT company providing Conductive N type SiC Boules from diamension 2 inch to 8 inch with bottom price on the market. Our conductive type doping with Nitrogen and resistivity is 0.015-0.025ohm.cm. SiC single crystal substrate material is also a kind of crystal material, belongs to the wide band gap semiconductor material, has the advantages of high pressure resistance, high temperature resistance, high frequency, low loss, etc., is the basic material for the preparation of high-power power electronic devices and microwave radio frequency devices, and has important applications in the fields of new energy vehicles, photovoltaic and 5G communication.

The growth of SiC single crystal is a complex and delicate process involving high temperature, high pressure and precisely controlled process parameters. At present, the main growth methods of silicon carbide single crystal include physical vapor transfer method (PVT), high temperature chemical vapor deposition (HTCVD) and liquid phase method. Each method has its unique growth mechanism and scope of application, which jointly promote the continuous progress of silicon carbide single crystal preparation technology.