4inch to 8inch N type SiC On SiC Epitaxy Wafer Supplier

SiC devices cannot be fabricated directly on the substrate. Instead, a single-crystal thin film (epitaxial layer) with the same crystal orientation and higher quality must be grown on the substrate before the device can be manufactured. HMT can provide 4 inch 6 inch and 8 inch SiC Epitaxy wafer on high quality SiC Substrate with thickness 350um. We support customized SiC epi layer thichkness and doping concerntration. Both N type and P type epi layer are available in HMT.

This thin film shares the same crystal orientation as the substrate. It can be grown using the same material as the substrate (known as homoepitaxy), such as growing SiC on conductive SiC substrates, which is commonly used for low-power devices and optoelectronic devices. Alternatively, different materials can be used (known as heteroepitaxy), such as growing GaN on SI SiC substrates, which is often employed in high-power devices. Additionally, the epitaxial wafer can be either P-type or N-type, enabling the formation of a PN junction with the substrate. The PN junction exhibits unidirectional conductivity, allowing it to function as a rectifier.

Semiconductor epitaxy is not only the core technology in semiconductor manufacturing, but also the key to the application of wide band gap semiconductor materials such as SiC and GaN . By means of homoepitaxy and heteroepitaxy techniques, high quality single crystal films can be grown on the substrate, which lays a foundation for the manufacture of high performance devices.